发明名称 FORMING METHOD FOR OXIDE SUPERCONDUCTOR THIN FILM
摘要 PURPOSE:To upgrade productivity by radiating laser on an oxide superconductor sintered material so as to vaporize the oxide superconductor so that an oxide superconductor thin film is formed on a substrate. CONSTITUTION:A sintered material (target) 2 of auxiliarily fired oxide superconductor powder is disposed on a supporting jig 18, and vacuum exhaustion of a container is fully performed, and next a mixed gas of high purity oxygen and high purity alkali is sealed in a container. After the gas is sealed-in until a prescribed pressure is obtained, a high-frequency voltage is applied to form a plasmatic state in a quartz glass tube 8 which is installed in the container, and YAG laser 4 is radiated on the target 2. Accordingly the target 2 is immediately vaporized, and vaporizing atoms and molecules react in a plasma region in the quartz tube 8 and are heaped on a saphire substrate in order to form an oxide superconductor thin film. This oxide superconductive thin film of good quality can be thus formed and also a film formation speed and productivity are upgraded in this film.
申请公布号 JPS63264819(A) 申请公布日期 1988.11.01
申请号 JP19870097372 申请日期 1987.04.22
申请人 HITACHI LTD 发明人 OKADA RYOJI;HANEDA MITSUAKI;ARAYA TAKESHI;HIOKI SUSUMU;ENDO KIJU
分类号 H01L39/24;C01B13/14;C01G1/00;C23C14/08;C23C14/28;C30B29/22;H01B12/06;H01B13/00;H01L39/12 主分类号 H01L39/24
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