| 摘要 |
PURPOSE:To form a metallic silicide electrode which has favorable electrical characteristics and has a small number of undulations in self-alignment mode by deposit-forming in sequence a metallic nitride film with less plastic deformation than that of a metallic silicide as well as an oxidation-resistant protective film after a metal capable of forming a metallic silicide has been deposited, and than forming a metallic silicide electrode by giving a heat treatment. CONSTITUTION:A polysilicon electrode 3 is formed by performing a patterning of a two-layer film consisting of SiO2 and polysilicon with a photolithography and etching technique. And SiO2 is deposited to the whole surface and SiO2 is treated so that it remains only at the side face of a polysilicon electrode structure and it does not remain at the other part by performing an anisotropic etching. And then, a titanium (Ti) film 4 of about 700 Angstrom thickness, a titanium nitride (TiN) film 5 of about 1000 Angstrom thickness, and a molybdenum silicide (MoSi2) film of about 400 Angstrom thickness to be used as an oxidation-resistant protective film 6 are formed in order. The above films are heat-treated in an atmosphere of nitrogen by using a diffusion oven of resistance heating and a titanium silicide (TiSi2) film 7 is formed by reacting Si with Ti. |
