发明名称 THIN-FILM THERMISTOR
摘要 PURPOSE:To stabilize the electrical connection of an SiC film and electrode films by forming a conductive plating film onto the SiC film laminated onto a pair of the electrode films while also shaping conductive plating films onto the electrode films on which the SiC film is not laminated. CONSTITUTION:A pair of Au-Pt thick-film pectinate electrode films 2 are shaped onto one surface of a plate-shaped alumina substrate 1. An SiC film 3 is formed onto one surface of the plate-shaped alumina substrate 1 and a pair of the Au-Pt thick-film pectinate electrode films 2 so that a pair of the Au-Pt thick- film pectinate electrode films 2 are electrically connected mutually. Electroplating Pt films 4 are shaped onto the SiC film 3 laminated onto the Au-Pt thick- film pectinate electrode films 2. The electroplating Pt films 4 are formed selectively onto the SiC film 3 laminated onto the Au-Pt thick-film pectinate electrode films 2 and the Au-Pt electrode films 2 on which the SiC film 3 is not laminated. Accordingly, since the electrical connection of the electrode films and the SiC film is stabilized, heat resistance is improved, and the film thickness of the electrode films in the welding sections of leads is increased, thus facilitating welding.
申请公布号 JPS63265403(A) 申请公布日期 1988.11.01
申请号 JP19870100382 申请日期 1987.04.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAGAI TAKESHI;ITO MASAHIKO
分类号 H01C7/04 主分类号 H01C7/04
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