| 摘要 |
PURPOSE:To equalize the coverage of manganese dioxide, and to form a proper irregular layer stably while improving tan delta value, an impedance value, leakage currents, etc. by providing a process, in which powder particles are sprinkled over or sprayed, after specified pretreatment at the time of the formation of a semiconductor layer. CONSTITUTION:An anode body 12 consisting of a tantalum sintered body, from which an anode lead 11 is led out in an implanting manner, is anodized in a phosphoric acid aqueous solution, and a tantalum oxide film 13 is shaped. A manganese nitrate solution is dip-attached onto the oxide film, and a manganese dioxide layer is shaped through thermal decomposition. The operation of the dip and thermal decomposition is repeated three times, and the manganese dioxide layer in sufficient quantity is formed. The anode body is immersed into the manganese nitrate aqueous solution for several sec, the surface is dampened, and the anode body is set to a rotary type sprinkler into which manganese dioxide powder having grain size of approximately 20-150mum is admitted. The anode body is turned, and the powder of manganese dioxide is attached to the anode body. The anode body is dipped into manganese nitrate and manganese nitrate is thermally decomposed another one time after thermal decomposition, thus stabilizing a manganese dioxide semiconductor layer 14. Accordingly, the coverage of manganese dioxide is stabilized and uniformized in the semiconductor layer 14 while a sufficient uneven layer can be acquired.
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