| 摘要 |
PURPOSE:To enable a TFT to be supplied with power from either one side of terminals even if exceeding two positions are subjected to short-circuit by a method wherein either source bus or gate on both sides of short-circuit position is disconnected by laser trimming process to form an auxiliary bus. CONSTITUTION:Short-circuit defects A-C are disconnected at respective positions 1-4 of source bus 3 by laser trimming process to form a passivation film 9 composed of silica, etc., on overall surface of a substrate 1. At this time, contact holes 14 to expose a part of source bus 3 are made in the positions near terminals outside the disconnection positions 1 and 4 of source bus 3. Next, a light shield 12 made of aluminium covering the semiconductor film of thin film transistor TFT 7 is formed on the passivation film 9. Through these procedures, power can be supplied from either one side of terminals so that the TFT between short-circuited positions may be supplied with power even if exceeding two positions are subjected to short-circuit.
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