| 摘要 |
PURPOSE:To form the titled film with low resistance by using a gaseous mixture of an inert gas with O2 as a sputtering gas and carrying out reaction sputtering under a specified partial pressure of O2 to weaken a specified orientation of crystals of an electrically conductive transparent film of In2O3 contg. Sn to a substrate. CONSTITUTION:Metallic In contg. a little Sn is used as a target. A gaseous mixture of an inert gas such as Ar or N2 with an adequate amount of O2 is used as a sputtering gas. The target is subjected to reaction sputtering by a reaction magnetron sputtering method under 2X10<-4>-2X10<-3> partial pressure of O2 to form an electrically conductive transparent film of In2O3 contg. a little Sn on a substrate heated to a suitable temp. By controlling the partial pressure of O2 to said value, the <111> orientation of crystals of the resulting film to the substrate can be weakened. Accordingly, this electrically conductive transparent film of In2O3 has low resistance such as <=about 5X10<-4>OMEGAcm specific resistance. |
