发明名称 PATTERN FORMING METHOD
摘要 <p>PURPOSE:To make it possible to form a pattern having a small deviation from the designed measurements and to form the pattern having a steep cross-sectional form by a method wherein the progress of developing on the side face of the formed pattern is suppressed by performing a treatment for decrease in the developing speed of a positive type resist while the developing operation is being conducted. CONSTITUTION:A hardly-melting treatment is conducted on the surface of the prescribed substrate 1 by spreading a positive type resist 2 on the substrate 1, a hardly-melting layer 3 is formed at least in the thickness of the hardly- melting layer of the positive resin is developed by projecting a particle beam 4 on the desired part of the positive resist 2, and a hardly-melting layer 3 is formed by performing the hardly-melting treatment on the surface of the positive resist. Thus, a developing-speed-reduced layer is formed on the side face of the resist pattern, and as said layer can be used as a protective layer, the lateral expansion of the pattern while a developing operation is being conducted can be suppressed. As a result, the pattern having small deviation from the designed value and a steep cross-sectional shape can be formed.</p>
申请公布号 JPS63263723(A) 申请公布日期 1988.10.31
申请号 JP19870097308 申请日期 1987.04.22
申请人 HITACHI LTD 发明人 YOSHIMURA TOSHIYUKI;MURAI FUMIO;OKAZAKI SHINJI
分类号 G03F1/00;G03F1/68;G03F1/80;H01L21/027;H01L21/30 主分类号 G03F1/00
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