发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To stabilize the operation of an IC by forming a resistor between one end of undesired parasitic capacitance formed attended with the forming of a load resistance and a power supply path so as to reduce the frequency component leaked to the power supply path via the parasitic capacitance. CONSTITUTION:An emitter of a transistor (TR) Q1 is connected to ground and a resistor R1 acts like a load resistor. An input signal Vin is fed to the base and an amplified output signal Vout is obtained from a collector. One end of the parasitic capacitance C1 is connected to the power supply path Vcc via a resistor R0. Inductances L1, L2 are the inductance of a couple of the power path and the inductance of the leads of the IC. The impedance of the parasitic capacitance C1 varies with the frequency of an output signal Vout and since the resistor R0 is interposed with the power path Vcc, the signal leakage from the collector via the capacitor C1 is reduced.
申请公布号 JPS63263903(A) 申请公布日期 1988.10.31
申请号 JP19870097339 申请日期 1987.04.22
申请人 HITACHI LTD 发明人 NISHIMOTO SATORU;SHIMOKAWA RYUSHI;UEDA SEIICHI
分类号 H01L27/04;H01L21/822;H01L27/06;H03F1/00;H03F3/195;H03F3/20;H03F3/213 主分类号 H01L27/04
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