| 摘要 |
PURPOSE:To decrease a parasitic resistance and realize a gate distance long enough by a method wherein an active layer high in concentration is provided between electrodes formed on a semi-insulating compound semiconductor substrate. CONSTITUTION:Two electrodes 26 and 27 are provided on a semi-insulating compound semiconductor substrate 21 through the intermediary of an active layer 23, and ohmic electrodes 28 and 29 are provided outside the electrodes 26 and 27 through the intermediary of active layers 25a and 25c substantially higher than the active layer 23 in concentration. Moreover, an active layer 25b is provided in the active layer 23 between the gate electrodes 26 and 27, which is higher than the active layer between the substrate 21 and the electrodes 26 and 27 in concentration. The active layer 25b is interposed between the electrodes 26 and 27 in such a manner as mentioned above, and thus a parasitic resistance can be decreased and a gate distance can be also set so as to be adequate.
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