| 摘要 |
PURPOSE:To improve mass productivity, and to obtain a single-peaked far-field pattern by mutually bringing striped light-emitting regions near so that phase is synchronized and displacing the phase of outgoing beams from adjacent stripes at 180 deg.. CONSTITUTION:A semiconductor laser consists of an n-type GaAs substrate 1, an n-type Al0.4Ga0.6As clad layer 2, an n-type Al0.35Ga0.65As optical guide layer 3, an Al0.08Ga0.92As active layer 4, a p-type Al0.4Ga0.6As clad layer 5, an n-type GaAs electrode layer 6, an n-type electrode 7, a p-type electrode 8, light-emitting stripe regions 9, resonator faces 10 through etching, and p<+> diffusion regions 11. The optical guide layer 3 is thickened in groove sections, and oscillation beams are wave-guided along the groove sections. Since intervals among stripes are narrowed, however, beams mutually exude, and stimulated emission is generated extending over the whole stripes. Optical confinement in a light-emitting region is most increased at modes where phase is displaced at 180 deg. among adjacent stripes, and 180 deg.-phase modes are oscillated preferentially. Stepped sections are formed on outgoing-side resonator faces, phase is displaced at 180 deg. among adjacent stripes, and a light-emitting far-field pattern is shaped in a single peak. |
