| 摘要 |
PURPOSE:To reduce the thickness of an active layer near the end face of a laser resonator thinner than that of an active layer in the resonator by partly forming an SiO2 film or an Si3N4 film, and forming an AlGaAs multilayer film by a reduced pressure organic metal vapor growing method thereon. CONSTITUTION:When AlxGa1-xAs layers 2, 4 and a GaAs layer 5 are grown by a reduced pressure organic metal vapor growing method on a GaAs substrate 1 formed partly with an SiO2 film 9 and an Si3N4 film, the layers 2, 4 and 5 are grown on the substrate 1, but not grown on the film 9 and the Si3N4 film. Thus, the quantities of the Ga, Al, As which contribute to the growth are increased on the substrate 1 slightly separated from the film 9 or the Si3N4 film ss compared with the substrate 1 sufficiently separated from the film 9 or the Si3N4 film. Thus, the growing velocity is accelerated, and the thickness of the layer 3 can be reduced near the end face, and increased in a laser chip.
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