| 摘要 |
PURPOSE:To inhibit alpha-ray irradiation from U, etc., existing in an insulating substrate, and to prevent the malfunction of a memory cell by filling a clearance between a semiconductor chip and the insulating substrate connected according to a flip-chip system with a polyimide group resin. CONSTITUTION:A conductor wiring 2 as an evaporated film consisting of three layers of NiCr, Pd and Au is formed onto an alumina ceramic substrate 1. Solder bumps 4 composed of a Pb-Sn alloy are shaped to a semiconductor chip 3. Solder is made to reflow, and the chip 3 is connected to the wiring 2. Polyimide varnish is dropped to seal the chip 3, deaeration treatment is executed under decompression of 10<2>Torr, and a polyimide resin 5 is cured through heat treatment. The connection of external terminals and the sheathing of a resin are conducted, thus completing a semiconductor memory storage. According to the constitution, the malfunction of a memory cell can be prevented, and the reliability of the semiconductor memory storage is improved. Polyimide varnish may be injected from a through-hole in an insulating substrate.
|
