| 摘要 |
PURPOSE:To lower contact resistance in wiring connection, and to improve reliability by forming an electrode window, applying an insulating film for preventing the permeation of a gas contained in the insulating film, leaving the insulating film only on the side face of the electrode window and shaping an Al wiring. CONSTITUTION:An Al wiring 3 and an inter-layer insulating film 4 are formed onto a semiconductor substrate 1 in succession. The film 4 is shaped by laminat ing a hillock preventive film 41, an SOG film 42 and a PSG film 43. The film 4 is anisotropic-etched to bore an electrode window 5, and an Si3N4 film 15 is applied onto the whole surface, and used for preventing the permeation of a gas included into the film 4. Only the film 15 vertically applied onto the side face of the electrode window 5 is left. Al is applied onto the film 4 containing the window 5, the side face of which has the film 15, and patterned to shape an Al wiring 16. Accordingly, degassing from the window 5 is inhibited by the film 15, an Al film is attached completely into the window 5, and the wirings 3 and 16 are connected perfectly.
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