| 摘要 |
PURPOSE:To make it possible to easily manufacture the title semiconductor device even when its base layer is several mm or thereabout in thickness, by a method wherein the semiconductor device on which a carrier travels in the direction vertical to a semiconductor substrate, is grown on the substrate as far as its base layer, and after an electrode which will be brought into ohmic contact with the base layer has been arranged, a required semiconductor layer is grown again on the base layer. CONSTITUTION:First, a collector layer 2, a collector barrier layer 3 and a base layer 4 are epitaxially grown successively using an MBE method for example, and a base electrode 8 is formed on the semiconductor substrate using a sputtering method and the like. Said semiconductor substrate is placed in an MBE growth device, and first, the surface of the base 4 is cleaned, and subsequently, an emitter barrier 5 and ah emitter layer 6 are grown on the base layer 4. The deposition in a polycrystalline state located on the electrode 8, formed when said MBE growing process was conducted, is removed in a selective manner for single crystal. Then, an emitter electrode 9 is arranged on the emitter layer 6, a selective etching is performed in order to expose the collector layer 2, and a collector electrode 7 having the constitution same as the collector layer 2 is provided by performing selective etching.
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