| 摘要 |
PURPOSE:To surely remove the impurities on the surface of a substrate in a short time in a spare chamber by introducing a gas not affecting film formation into the spare chamber to generate and electric discharge, and imparting ion bombardment to the substrate surface. CONSTITUTION:The substrate 5 is set in the spare chamber 1, and a gate valve 4a is closed. The inside of the spare chamber 1 is evacuated, and the gas not adversly affecting film formation such as hydrogen and an inert gas is introduced. A high-frequency power is supplied to a high-frequency electrode 6a from a high-frequency source 7a, and the ion and electron in the plasma produced by the electric discharge are allowed to collide on the substrate 5 with the energy accelerated by the high-frequency electric field and the electric field in a sheath. At this time, a part of the neutral corpuscules are also allowed to collide with the substrate 5. As a result, the impurities adsorbed on the surface of the substrate 5 are splashed, and the surface of the substrate 5 is cleaned. The cleaned substrate 5 is transported to a film forming chamber 2, and a film is formed.
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