| 摘要 |
PURPOSE:To prevent the heat deterioration of a GaAs tunnel diode, by interposing a heat deterioration protecting layer composed of A GaAs between a tunnel junction layer and a lower cell. CONSTITUTION:On an n-type GaAs substrate 100, the following are stacked in order; a heat deterioration protecting layer 7, i.e., AlXGa1-XAs layer (carrier density 3X10<18>cm<-3>, film thickness 0.5mum), a tunnel junction layer 3, i.e., n<++> type GaAs layer (6X10<18>cm<-3>, 0.05mum), a p<++> type layer (1.5X10<19>cm<-3>, 0.05mum), a rear electric field layer 4 of AlXGa1-XAs layer (5X10<18>cm<-3>, 1mum), and an electrode layer 6 of GaAs layer. Thereby, an upper cell 2 composed of AlGaAs to be arranged on the upper part can be grown (formed) at a high temperature without deteriorating characteristics of the tunnel junction layer 3, so that a multi-wavelength semiconductor element with excellent characteristics can be easily realized. |
