| 摘要 |
PURPOSE:To reduce a cost by forming only a semiconductor switching element for either one arm of upper and lower arms of an inverter bridge in a high speed switching type and the other in a low speed switching type. CONSTITUTION:An inverter main circuit uses two sets of switching elements EFT1-FET3, BPT1-BPT3 for forming upper and lower arms at the phases of the main circuit bridge, and is composed of a series circuit of it with an inverter load 3. A short period signal is applied to either one of the elements FET1-FET3, BPT1-BPT3, and a long period signal is applied to the other to obtain a predetermined pulse train. In this case, as two sets of the elements, MOS type high speed switching type transistors FET1-FET3 are corresponded to bipolar low speed switching type transistors BPT1-BPT3, the short signal is applied to a high speed side, and the long signal is applied to a low speed signal. Thus, a high speed switching type inverter is obtained.
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