| 摘要 |
PURPOSE:To improve the patterning precision by exposing a resist pattern having completed the post-bake to a microwave and far ultraviolet rays, thereby preventing the deformation of the resist pattern due to a temperature rise. CONSTITUTION:In the post-bake, the water stored in a resist pattern 15 is selectively heated and vaporized away by the exposure to a microwave prior to or simultaneously with the exposure to far ultraviolet rays. And, even when the crosslinking reaction of the resist resin due to the exposure to the far ultraviolet rays sequentially proceeds from the surface of the resist pattern 15 toward the inside thereof, the water is prevented from being left in the inside thereby allowing the cross-linking reaction to completely proceed into the inside of the resist pattern 15. With this, the heat deformation properties of the resist pattern 15 is enhanced thereby improving the patterning precision. |
