| 摘要 |
PURPOSE:To obtain a semiconductor device of uniform characteristics in spite of a simple working process, by a method wherein impurity ions are implanted into a semiconductor substrate and an impurity region is buried in a semiconductor substrate. CONSTITUTION:An impurity region 13 is buried in a semiconductor substrate 11, 12, by implanting impurity ions therein. That is, the energy of ion- implantation is so controlled that the impurity region 13 is buried in an accurate depth position of the semiconductor substrates 11, 12. Thereby the channel length can be accurately controlled. Further, in the case of forming the semiconductor substrate 11, 12, it is not necessary to divide the process into two stages in which the depth position of the impurity region 13 is applied to the boundary. |
