发明名称 TARGET FOR SPUTTERING
摘要 PURPOSE:To stably form films of a uniform thickness by sputtering for a long time by forming a target used with a rare earth metal having columnar crystals so arranged that the longitudinal direction of the crystals is made perpendicular to the surface of the target to be sputtered. CONSTITUTION:A target for sputtering is formed with a rare earth metal having columnar crystals so arranged that the longitudinal direction of the crystals is made perpendicular to the surface of the target to be sputtered. The rare earth metal is selected among the lanthanoids having atomic number 57-71, yttrium and scandium and the diameter of the columnar crystals is regulated to <=about 400mum, preferably <=150mum. By the specified crystal arrangement, a film of a uniform thickness can stably be formed by sputtering with the target.The target is suitable for use in the production of a magneto-optical disk or the like.
申请公布号 JPS63262461(A) 申请公布日期 1988.10.28
申请号 JP19870097690 申请日期 1987.04.21
申请人 MITSUBISHI KASEI CORP 发明人 MIWA TAIICHIRO;OSHIMA SHINZO;SUGIMURA NOBUO
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址