| 摘要 |
PURPOSE:To improve the thermal stability of a resist pattern by making a treatment chamber airtight with a stage on which a substrate is placed and by treating the resist pattern of the substrate surface with heat while directing ultraviolet rays to the substrate surface in situations where the inside of the treatment chamber is depressurized. CONSTITUTION:As a treatment chamber S is evacuated, for example, at a pressure of 30 Torr by using a vacuum pump 15, a shutter 25 opens after a nitrogen gas N2 is supplied to the treatment chamber S through an inactive gas supply pipe 17 as well as an inactive gas supply passage 16 and as ultraviolet rays are directed to a resist pattern of the substrate W surface under reduced pressure, the resist pattern is treated by heat. In this way, the resist pattern can be treated by heat as the ultraviolet rays are directed under reduced pressure to the resist pattern which is formed at the substrate; besides, its control under respective conditions is so easy that this approach permits the resist pattern to exhibit an excellent thermal stability. |
