| 摘要 |
PURPOSE:To reduce the drawing resistance of an intrinsic base region, by forming an external base region and then introducing impurities through an emitter window so as to cancel the external base region and next by forming the intrinsic base region and an emitter region through the emitter window. CONSTITUTION:After an insulating film 5 made of silicon oxide SiO2 is formed on a surface, an emitter window 5a is opened on an external base region 6. Next, type impurities of conductivity which functions to cancel the external base region 6 are introduced through the emitter window 5a and the external base region 6 just under the emitter window 5a is canceled. Next, ion implantation is performed through the emitter window 5a to form a p-type intrinsic base region 7 and further the ion implantation is performed thereon to form an n<+> type emitter region 8. Finally, patterning is performed to form a base electrode 6a, which is in contact with the external base region 6, and an emitter electrode 8a, which is in contact with the emitter region 8. An interval between the emitter region and the external base region can be hence formed very fine, so that a drawing resistance can be decreased and an element speed is improved.
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