发明名称 SEMICONDUCTOR LASER ARRAY
摘要 PURPOSE:To conduct fundamental transverse mode oscillation by using at least either one of two electrodes, which are mutually insulated electrically and formed respectively in at least two branching regions in an active layer, as an electrode for controlling the phase of oscillation beams. CONSTITUTION:Two electrodes 36, 38 are shaped respectively into at least two branching regions 32, 34 in an active layer 26 under mutually electrically insulated states. At least either one of these electrodes 36 and 38 is employed as an electrode for controlling the phase of oscillation beams. The refractive index of the active layer 26 in a current injection region alters by changing the quantity of injection of currents flowed through the active layer 26 from the electrode for controlling the phase, and effective optical length reaching from a resonator edge face 42a to 42b and/or effective optical length reaching from the resonator edge face 42a to 42c can be varied. Accordingly, currents are caused to flow through the electrode for controlling phase so that each effective optical length is equalized, thus bringing the oscillation mode of a confluence region 28 to a 0-order fundamental mode.
申请公布号 JPS63260187(A) 申请公布日期 1988.10.27
申请号 JP19870094960 申请日期 1987.04.17
申请人 OKI ELECTRIC IND CO LTD 发明人 KAWAI YOSHIO;WADA HIROSHI;OGAWA HIROSHI;HORIKAWA HIDEAKI
分类号 H01S5/00;H01S5/042;H01S5/10;H01S5/40 主分类号 H01S5/00
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