| 摘要 |
PURPOSE:To bury a conductive film perfectly into a via hole, by providing a semiconductor device in which the via hole is formed in an insulating film piled on its main surface and next by using a material which is capable of selective formation of metal to form a thin film on side wall parts inside the via hole similarly on the surface of the substrate. CONSTITUTION:A silicon oxidizing film 12 is piled about 1 mum on a silicon substrate 11 and then a via hole 15 is formed by a dry etching method. In succession, after a polycrystalline silicon film is piled 0.05mum by a CVD method, reactive ion etching is used to remove polycrystalline silicon from the silicon oxidizing film 12 so that a silicon side wall film 13 is formed on only a side wall of the silicon oxidizing film 12. While a triisobutyl aluminium film is used as the source gas, an aluminium film 14 is piled about 1 mum by the CVD method at a substrate temperature of 250 deg.C and a vacuum degree of 0.6 Torr. Accordingly aluminium is perfectly buried into the via hole 15.
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