| 摘要 |
PURPOSE:To easily form an electrode having a film thickness difference of minute structure by using a prescribed etching liquid or a plasma gas so as to etch a vapor-deposited film adhered on a substrate thereby a film thickness difference. CONSTITUTION:In preparing an electrode having a film thickness difference, at first, lithography using light or electronic beam as a light source is used to prepare a resist pattern 2 on the face of the substrate 1 and a vapor-deposited film 3 is formed by using a beam in a perpendicular direction. Then a vapor- deposited film 5 is obtained by using a beam 4 in an oblique direction so as to obtain the shadow of the resist and the vapor-deposited film 3. Then the vapor-deposited film 3 is etched to a proper thickness by using an etching liquid or a plasma gas not etching the vapor-deposited film 5 but etching the vapor- deposited film 3. Then the vapor-deposited film 5 is removed by using an etching liquid or a plasma gas not etching the vapor-deposited film 3 but etching the vapor-deposited film 5. Then the resist is removed by using the conventional lift-off method. Thus, the electrode having a desired film thickness difference is obtained.
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