| 摘要 |
PURPOSE:To prevent deposition of an intermediate product at the output port of an introducing pipe and to improve growing efficiency and reproducibility, by separating first carrier gas and second carrier gas with a third carrier gas flow, and introducing the first and second carrier gases into a gas mixing region. CONSTITUTION:When, e.g., InP is grown, at first, cooling water is injected through a cooling-water input port 32 and discharged through a cooling-water output port 33. Thus a main pipe 11 of an introducing pipe is cooled. Then hydrogen gas including trimethylindium is injected through an organic-metal input port 22 and inputted into a heated gas mixing region through the main pipe 11 of the introducing pipe. At the same time, hydrogen gas including phosphorus trichloride is introduced through a chloride input port 42 of a reacting pipe 4. Hydrogen gas is further introduced through a separating gas input port 2. Thus, the pure hydrogen gas separates the hydrogen gas including the organic- metal and the hydrogen gas inclusing the phosphorus trichloride. The raw material gases are not mixed at a low temperature part close to the water-cooled pipe wall. Therefore, In and intermediate product is hard to attach to the reacting pipe, the introducing pipe and the like. The organic-metal can be introduced into the reacting pipe efficiently.
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