| 摘要 |
PURPOSE:To prevent a short-circuit with a semiconductor substrate due to the breakdown of a field oxide film resulting from thermal stress at the time of fusion by forming a diffusion layer having a conductivity type opposite to that of the semiconductor substrate under a fuse. CONSTITUTION:The semiconductor device has an aluminum wiring 1 and a fuse 2 consisting of polycrystalline silicon and in width of approximately 2-3mum, and an inter-layer insulating film 3 on the fuse 2 and a passivation film 4, a window 5 for partially removing both the film 3 and the film 4 and a field insulating film 8 are shaped for preventing heat dissipation. A diffusion layer 7 (such as a P well on an N-type substrate) having a conductivity type different from that of a semiconductor substrate 6 is formed. Accordingly, even when the field insulating film is broken when the fuse is fusion-cut, the fuse is not short-circuited with the semiconductor substrate, thus improving reliability and yield.
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