| 摘要 |
PURPOSE:To obtain specified dynamic range and sensibility by making structure between a gate electrode having MOS capacitance in a light-receiving section and a semiconductor substrate and structure between MOSFETs constituting gates for the MOSFETs to differ and optimizing gate insulating-film structure. CONSTITUTION:Each gate insulating-film 24-26 of a CMD 21 as an amplifica tion type solid-state image sensing element and P channel MOSFET and N channel MOSFET 22, 23 forming a peripheral circuit is shaped by gate insulating films of the same kind, and only the film thickness topti of the gate insulating- film 24 in the CMD 21 and the film thickness tMOS of the gate insulating films 25, 26 in the CMOSFETs 22, 23 are formed so as to differ. The film thickness tMOS of the CMOSFETs 22, 23 is brought to approximately 100-400Angstrom when gate length extends over approximately 1-2mum, but the value of the film thick ness topti of the CMD 21 changes in response to a photo-detector having any feature-for example, the film thickness topti is brought to approximately the same extent as the film thickness tMOS of the MOSFETs 22, 23 when a large dynamic range is required. Accordingly, the sufficient dynamic range and high sensibility can be acquired. |
