| 摘要 |
PURPOSE:To form a fine interconnection easily, and to obtain the interconnection having high resistance against a void by forming a coating consisting of a second metal, or further of a third metal, on the top face and side face of the interconnection made of a first metal formed onto a substrate. CONSTITUTION:An aluminum interconnection 104 having a desired pattern is formed onto a semiconductor substrate 101, to which an interconnection 102 as a lower layer and an interlayer insulating film 103 with an interconnection connecting hole to a semiconductor surface are shaped, by using high-purity aluminum. Zinc 105 is applied selectively onto the interconnection 104 through a method such as electroless plating, copper 106 is further applied selectively onto the surface of zinc 105 through electroless plating, and a passivation film 107 is applied. Accordingly, a fine interconnection is formed easily, and the interconnection having high resistance against a void produced due to electro- migration and heat history can be acquired.
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