HYDROGEN PLASMA SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

PURPOSE:To grow a compound semiconductor thin film at a low temperature without forming a chemical defect by mounting a substrate holder facing to a hydrogen plasma beam and electrodes impressing voltages toward the plasma beam at a high vacuum growth chamber. CONSTITUTION:Hydrogen which is in a state of plasma at a plasma chamber 1 is introduced as a hydrogen plasma beam into a high vacuum growth chamber 3 having a pressure of 10<-3>-10<-5> Torr in situations where no particles collide one another. A pair of electrodes 4 and 5 are arranged in parallel to this beam and respective positive and negative electrodes are impressed. Hydrogen ions and electrons are eliminated to the electrode sides. A hydrogen radical beam 6 is directed to the surface of a substrate 8. When an organic metal beam for forming a compound semiconductor through a irradiating device 9 mounted at the growth chamber 3 together with the hydrogen radical beam are directed to the substrate 8, both beams react at the surface of the substrate 8 and organic components of methyl and ethyl groups and the like are isolated by the excited energy of radicals and they are removed after being gasified into methane, ethane and so on by joining to hydrogen atoms. The compound semiconductor constituent atoms which remain are taken in by crystal lattices to form a compound semiconductor thin film.