| 摘要 |
PURPOSE:To reduce an organic film or make treatments of etching and the like promptly and uniformly without doing damage to a wafer by mounting a cylindrical upper electrode at an upper part of a chamber and also a lower electrode for placing the wafer at a lower part of the chamber and by forming exhaust ports at positions that are in the vicinity of the lower electrode periphery. CONSTITUTION:Operations such as the descent of a lower electrode 9 and mounting of a wafer W on the lower electrode 9 make the inside of the chamber 2 air-tight and as the evacuation of the air contents in the chamber through exhaust ports 12 allows the inside of the chamber 2 to be under reduced pressure, a mixed gas, for example, the gas comprising 5 vol% of hexafluoroethane and oxygen of the remainder is introduced from a reaction gas introduction tube 4 and then high frequencies are impressed to an upper electrode 6. Then, the plasma is generated principally at the upper part in the chamber 2 which is surrounded by the upper electrode 6 and an activated oxygen radical together with the plasma reaches the wafer W by the process of suction from the exhaust ports 12 and reacts with an organic film of the wafer W surface to allow removal of organic film.
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