| 摘要 |
PURPOSE:To prevent the occurrence of bird's beaks as well as to make it possible to form a microscopic element region by a method wherein a groove, surrounding a semiconductor element forming region, is formed on one main surface of a semiconductor substrate, a film having an oxidation-resistant property is formed on the sidewall of said groove, the substance layer which becomes a stabilized oxide by oxidation is formed in the groove, and the generation of bird's beaks is prevented by oxidizing the substance layer. CONSTITUTION:A groove surrounding a semiconductor element forming region is formed on one main surface of a semiconductor substrate 101, a film 106 having an oxidation-resistant property is formed on the sidewall of said groove, and after a substance film 108 which becomes a stabilized oxide by oxidation has been selectively formed in the groove, the substance film 108 is oxidized. For example, a groove is formed on the silicon substrate 101 on which a silicon oxide film 102, a silicon nitride film 103 and a silicon oxide film 104 are formed, and a silicon oxide film 105, a silicon nitride film 106 and a polysilicon film 107 are formed. Then, anisotropic etching is conducted on the polysilicon film 107, the silicon nitride film 106 and the silicon oxide film 105 are wet-etched, and after silicon has been epitaxially grown in the groove, a silicon oxide film 109 is formed by thermally oxidizing the silicon epitaxial layer 108.
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