| 摘要 |
PURPOSE:To obtain a manufacturing apparatus which can control a film growing velocity and obtain a uniform film thickness in the formation of the film by providing two types of upper and lower electrodes in a reaction vessel, composing the upper electrode of a plurality of electrodes connected to high frequency power sources, and composing the lower electrode of a common electrode for placing a film forming substrate. CONSTITUTION:In a semiconductor manufacturing apparatus having a reaction vessel 21 having a gas supply port 28 for supplying first reaction gas and a gas inlet 29 for introducing second gas by forming a plasma, and a laser oscillator 39 provided out of the vessel 21 for decomposing the first gas, two types of upper and lower electrodes which oppositely face each other are provided in the vessel 21. The upper electrodes of both the electrodes are composed of a plurality of electrodes 33-35 respectively connected to high frequency power sources 36-38, and the lower electrode is composed of a common electrode 25 for placing a film forming substrate 26. Or, an ultraviolet light source 32 for irradiating an ultraviolet ray is attached into the vessel 21, and the electrodes 33-35 are composed of mesh electrodes.
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