| 摘要 |
PURPOSE:To obtain a semiconductor laser device whose operating characteristics are good by completely removing an electric-current constriction layer of a second conductivity type at the bottom of a stripe-shaped groove by etching a region from the electric-current constriction layer down to at least a boundary layer of a first conductivity type. CONSTITUTION:A first clad layer 2, an active layer 3, a second clad layer 4, a boundary layer 11 and an electric-current constriction layer 5 are formed in succession on a substrate 1 by using an MOCVD method. Then, an etching operation is executed down to the surface of the second p-type clad layer 4; a stripe-shaped groove 10 is formed along the direction of a resonator. Then, two layers, i.e., a buffer layer 6 and a contact layer 7, are formed on the second clad layer 4 and on the electric-current constriction layer 5. Lastly, an n-side electrode 8 is formed on the side of the substrate 1 and a p-side electrode 9 is formed on the side of the contact layer 7; a semiconductor laser device is completed. By this setup, this device operates with good characteristics without causing any intermittent oscillation.
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