| 摘要 |
PURPOSE:To protect an insulating-protective film from cracks or peeling-off and to enhance the yield and device reliability by a method wherein a P-SiO2 or B-SiO2 film is caused to be between an insulating-protective SiO2 or Si3N4 film and the surface of a light-emitting diode element. CONSTITUTION:In a light-emitting diode array wherein a plurality of light- emitting diode elements is placed under the coating of an insulating-protective film 14 on a compound semiconductor substrate 11, the insulating-protective film 14 is built of an SiO2 or Si3N4 film. Between the SiO2 or Si3N4 film and light-emitting diode element surfaces 20 and 21, a P-SiO2 or B-SiO2 glass film 10 is positioned. The rate of phosphorus or boron in the glass film 10 should preferably be 1-12 weight %. Presenting but a little film distortion, such a glass film 10 serves to flatten the surface of an N-GaAlAs or P-GaAlAs layer that contains protrusions on its surface. Accordingly, with the protrusions removed, the insulating-protecting film is protected from cracks and will not experience a local separation or peeling-off. |
