| 摘要 |
PURPOSE:To make it possible to form a sufficiently thick and excellently shaped insulating film on a cell plate and the sidewall part of the cell plate without damaging the characteristics of an element by a method wherein, after the insulating film is etched away using the sidewall of a film consisting of a material different from that of the insulating film as a mask, the sidewall of the film is removed. CONSTITUTION:A first insulating film 12 is formed on a semiconductor substrate 11, a conductive film 13 is formed thereon, a second insulating film 14 is formed on the film 13 and the films 13 and 14 are formed in a desired form. Then, a third insulating film 14 is formed, a film 16 consisting of a material different from that of the second and third insulating films 14 is formed and parts other than the sidewall of the film 16 are removed. Then, after the third insulating film 14 is etched away using the left sidewall of the film 16 as a mask, the sidewall of the film 16 is removed. After that, a gate oxide film 17, for example, is formed, a poly Si film is formed and after phosphorus is diffused in the poly Si film to let have a conductivity, an etching is performed to form a word line 18 and a one transistor type dynamic memory is formed. |
