| 摘要 |
PURPOSE:To be able to provide a region finite in resistance at specified temperature adjacently to a superconducting region zero in resistance at the said temperature, which is nearly as high as an upper face of an oxide superconductor provided on a substrate, by a method wherein a region finite in resistance at specified temperature and an electrode or lead zero in resistance at the said temperature connected with an end thereof are provided on the substrate. CONSTITUTION:A region 11 finite in resistance at specified temperature, which is superconducting or non-superconducting, and an electrode or a lead 10, which is connected with one end or plural ends of the said region 11, zero in resistance at the said temperature are provided on a substrate 1. For example, a material, which is turned into (YBa2)Cu3O6-8 after being formed into film, is provided insulating on the substrate 1 consisting of single crystal SrTiO3 through sputtering and annealed at 800-1000 deg.C in oxygen for the formation of a single crystal superconductive material 2. Next, photoresist 3 is selectively coated onto the upper face of the superconductive material 2 and a region 5 not coated with photoresist is doped with silicon through ion implantation 4. Thereafter, calcination is performed at temperature of 700-1000 deg.C in oxidizing atmosphere once again so as to transfer Tco of the ion-implanted region 11 to lower temperature side. |
