发明名称 EDGE EMISSION TYPE LIGHT EMITTING DIODE
摘要 PURPOSE:To prevent the laser oscillation by changing the current density inside a device by a method wherein an LED of the edge light emitting type is constituted to have a current constriction structure where the width of a groove is changed continuously inside the device. CONSTITUTION:An n-type InP current block layer 2 is grown on a p-type InP substrate 1. Then, a groove 8 is made on the n-type InP block layer 2 by a selective etching method by making use of a photoresist film as a mask in such a way that the groove is 9 mum in width on the light emitting side and 0 in width on the reflection side. A p-type InP clad layer 3, a p-type InGaAsP active layer 4, an n-type InP clad layer 5 and an n-type InGaAsP cap layer 6 are grown in succession on the layer. The current density to be injected into the active layer is smaller than the current density inside the groove 8 because an electric current is spread in the transverse direction in the p-type InP clad layer 3; in addition, because the width of the groove 8 becomes gradually narrow from the light emitting side toward the reflection side, the current density to be injected into the active layer in a region near the reflection side becomes considerably small as compared with another region near the light emitting side.
申请公布号 JPS63257281(A) 申请公布日期 1988.10.25
申请号 JP19870092207 申请日期 1987.04.14
申请人 NEC CORP 发明人 YOSHINARI ESEKO
分类号 H01L33/14;H01L33/30 主分类号 H01L33/14
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