| 摘要 |
PURPOSE:To complete the cure of resin without voids in a relatively short time of heating, such as for approx. 10 min. and to obtain a sufficient bonding strength by heating for curing a resin bonding material at three stages of low, intermediate and high temperatures. CONSTITUTION:When a semiconductor element is bonded by a bonding material to a substrate to manufacture a semiconductor device, a resin bonding material is thermally cured by a first step of heating it at 100-150 deg.C, a second step of heating it at higher temperature than that of the first step, and a third step of heating it at higher temperature than that of the second step. For example, it is heated at 100-150 deg.C for 3 min on a hot plate in the first step to evaporate low molecule organic component contained in the material. Then, it is heated at 150-180 deg.C for 3-7 min in the second step to accelerate the curing reaction of the resin without boiling the component having a boiling point of approx. 180-200 deg.C of a reactive diluent or the like contained in the material. Then, it is heated at approx. 300 deg.C for 2 min in the third step to complete the curing reaction of the resin.
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