发明名称 |
Laser furnace and method for zone refining of semiconductor wafers |
摘要 |
A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).
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申请公布号 |
US4780590(A) |
申请公布日期 |
1988.10.25 |
申请号 |
US19850800227 |
申请日期 |
1985.11.21 |
申请人 |
PRC CORP |
发明人 |
GRINER, DONALD B.;ZUR BURG, FREDERICK W.;PENN, WAYNE M. |
分类号 |
C30B13/24;C30B13/28;H01L21/00;(IPC1-7):B23K26/00 |
主分类号 |
C30B13/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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