| 摘要 |
PURPOSE:To reduce the increase in impurity concentration at the interface of a substrate and to decrease the crystal defects that develop at the interface of the substrate, by introducing doping gas and source gas into a reacting furnace at the same time or with the flow rates being changed. CONSTITUTION:The inside of a quartz bell jar 1 is displaced with nitrogen gas 4. Thereafter, susceptors 2 are heated by a high frequency induction heating method. The temperature of silicon substrates 3 on the susceptors 2 is kept at a growing temperature. Then source gas 7 and doping gas 6 are introduced into the bell jar 1 at the same time or with the flow rates being changed. An As doped polycrystalline silicon film is grown on each silicon substrate 3 on the susceptor 2. In this way, the increase in impurity concentration at the interface between the impurity doped polycrystalline silicon film and the silicon substrate can be reduced. The crystal defects that develop in the surface of the silicon substrate can be decreased.
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