| 摘要 |
PURPOSE:To make the sensitivity between devices uniform by a method wherein the thickness of a light-transmitting film on a photodetector part of a photodiode is made uniform so that a smear phenomenon can be reduced. CONSTITUTION:N-type impurity layers 4 which are isolated by guard rings 3 and act as photodetector parts of a photodiode and N-type impurity layers 5 constituting transmission lines are formed at a well 2 on the surface of a substrate 1; gates 7 for transmission use which are composed of polycrystalline silicon layers in order to read out a signal charge and to transmit it are formed on the surface of the substrate 1 via a gate insulating film; a light-transmitting oxide film 8 is formed in such a way that the photodetector parts composed of the impurity layers 4 covered with an oxide film 6 can be flattened; furthermore, a light-shielding film 9 composed of an Al film where the photodetector parts are opened is formed on the oxide film 8. |
