| 摘要 |
PURPOSE:To obtain a semiconductor device whose characteristics are good by a method wherein one part of a substratum oxide film to be used as a field oxide film is etched in advance and a nitride film which is thicker than other parts is deposited on an edge part of the remaining substratum oxide film so that an active region is made wide and that miniaturization is realized. CONSTITUTION:A substratum oxide film 2 is formed on one main face of a silicon substrate 1; the oxide film 2 is processed by an anisotropic plasma etching method by using a photolithographic technique by making use of a resist 5 as a mask. A nitride film 3 is formed on the oxide film 2; the nitride film 3 is coated with a resist 6. The resist 6 and the nitride film 3 are etched back at an identical rate; the surface of a thick part of the oxide film 2 is exposed. Then, the resist 6 is removed. The exposed substrate 1 is thermally oxidized by making use of the nitride film 3 as the mask; a field oxide film 4 is formed. By this setup, a semiconductor device whose characteristics are good can be obtained.
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