| 摘要 |
PURPOSE:To adjust deterioration of the high frequency characteristic or the decrease in yield in a short time if such defect takes place by providing plural capacitors to each microstrip line on the main surface of a semiconductor substrate and connecting one of them to a ground conductor at the rear face of the semiconductor substrate. CONSTITUTION:Plural capacitors 8a-8c are provided to the microstrip line 6 and a proper capacitor, e.g., the capacitor 8c only is connected to a ground conductor at the rear side of the semiconductor substrate 1 via a through hole 10. Moreover, a proper capacitor, e.g., the capacitor 9a only among plural conductors 9a-9c is connected to a ground conductor at the rear side of the semiconductor substrate 1 via a through hole 11 at the output side similarly. Thus, the effective electric length of the microstrip line is changed by selecting a capacitor among the plural capacitors provided to each microstrip line connected to ground. Thus, in the event of the deterioration of the high frequency characteristic or the yield, the defect is adjusted easily in a short time.
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