| 摘要 |
A double barrier tunnel diode, wherein a central quantum well is disposed between a pair of barrier layers to form a quantum barrier, the barrier layers having a composition such that a resonance energy level is created in the quantum well layer, and having a thickness sufficiently small that electrons can tunnel through the quantum barrier under an applied voltage. The quantum well and barrier layers are disposed between two electron injection layers having compositions selected so that the conduction band minimum energy for electrons in the injection layers is about that of, but less than, the resonance energy level of the quantum well. Electrons pass through the quantum barrier by tunneling, upon application of a small voltage across the double barrier tunnel diode sufficient to raise electrons near the conduction band minimum energy of the injection layer to the resonance energy level of the quantum well. The internal voltage necessary for tunneling is reduced, as compared with conventional double barrier tunnel diodes. A higher tunneling current and a higher peak-to-valley current ratio over the negative resistance range are obtained, and the DC operating point voltage is reduced.
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