| 摘要 |
PURPOSE:To prevent any leakage current from occurring by a method wherein a gate electrode is formed on a semiconductor substrate while a source/drain diffused layer is formed in the side of gate electrode. CONSTITUTION:A gate insulating film 21 such as SiO2 is formed on the surface of a semiconductor substrate 20; a gate electrode 22 such as polycrystalline silicon is formed on the gate insulating film 21; and the sidewall part of gate electrode 22 is oxidized to form an oxide film 23 such as SiO2. An N-type source/drain diffused layer 24 in thickness of x and specified impurity concentration gradient in the depth direction is formed on the semiconductor substrate 20 in the side of gate electrode 23. In such a source/drain diffused layer 24, the upper layer part and the lower layer part are respectively formed on N<+>- type diffused layer in high concentration and N<->-type diffused layer in low concentration. Through these procedures, any leakage current due to the transition of sidewall and ion implantation, etc., can be prevented from occurring.
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