| 摘要 |
PURPOSE:To improve pulling velocity of a single crystal and to prevent mixing of dropped foreign material in a crucible in an apparatus for growing a single crystal by the CZ process by forming a specified shielding member in double layers around a pulling area of the single crystal providing thus a temp. gradient in the pulling direction to the single crystal effectively. CONSTITUTION:An apparatus for growing a single crystal consisting of a crucible 1 for contg. starting materials for the single crystal to be grown, a heating means 2 for melting said starting materials, and a pulling means for pulling the single crystal 4 as it is grown from the melt in the crucible 1, is constituted additionally as described hereunder. Namely, a cylindrical metallic shielding member 8 arranged to above the melt in the crucible 1 around a pulling area of the single crystal 4, and having smaller diameter as it is nearer toward a bottom of the crucible from the upper side, a cooling means 8a provided additionally to the metallic shielding member 8, and a cylindrical shielding member 9 (made of, for example, graphite) arranged with a necessary distance to the outside of the external peripheral surface of the metallic shielding member 8 so as to shield the external peripheral surface from evaporated molten starting material and radiant heat source.
|
