发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To realize miniaturization, and improve reliability, by shortening the time of field oxidation, and preventing a channel-stopper layer from permeating in the horizontal direction. CONSTITUTION:By shortening the oxidizing time to form a field oxide film 7, the permeation of a channel-stopper layer 6 in the horizontal direction is reduced, and the break down voltage of a diffusion layer is made high. An insulating film 9 is formed at the center of a region for forming a field oxide film 7, which is made thick. As the field oxide film 7 can be formed rather thinly, the bird's beak can be reduced. Thereby, the element isolation of high dielectric strength capable of miniaturization is enabled.
申请公布号 JPS63255938(A) 申请公布日期 1988.10.24
申请号 JP19870089717 申请日期 1987.04.14
申请人 TOSHIBA CORP 发明人 NAKAYAMA RYOZO
分类号 H01L21/316;H01L21/76;H01L27/08;H01L29/78 主分类号 H01L21/316
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