| 摘要 |
PURPOSE:To prevent any leakage current from occurring by a method wherein a base as the first impurity diffused layer is formed in an epitaxial layer to be a collector to form the second impurity diffused layer as an emitter in junction depth deeper than that of the first impurity diffused layer inside the base. CONSTITUTION:A base B as the first P type impurity diffused layer in shallow junction depth is formed almost in the central position of an element region of an epitaxial layer 11 while inside the base B, the second impurity diffused layer to be an N<+>type emitter E in junction depth deeper than that of base B is formed so that the emitter E protruding from the base B may be in direct contact with the epitaxial layer 11 working as a collector. Thus, the emitter E and the epitaxial layer 11 are impressed with the same potential so that when the emitter E is impressed with high potential, the epitaxial layer 11 may be impressed with the same high potential to impress the base B and the epitaxial layer 11 with inverse bias. Through these procedures, any leakage current can be prevented from occurring without forming any parasitic transistor at all.
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