| 摘要 |
PURPOSE:To obtain the amorphous silicon thin film of high photoconductivity, high dark resistivity and high growing speed by a method wherein the gas ion, formed by colliding an accelerated electron against the mixed gas of hydrogen and ammonia and a silicon monoatom, is collided against an electrode substrate. CONSTITUTION:A vacuum chamber 2 is brought into the high degree of vacuum state higher than 1X10<-5>Torr, and the mixed gas of hydrogen and ammonia is introduced from a gas introducing tube 6 in such a manner that partial pressure will be in the range from 8X10<-4>Torr to 1X10<-5>Torr. Then, said mixed gas is ionized by performing an ionization and a dissociation by having the silicon atomlike particles, which are vaporized in a crucible 1 by an electron beam evaporation source 4, to come into collision with the introduced mixed gas using the high speed electron sent from the first electron generator 7. On the gas ion and the silicon ion, high energy is given by applying a negative DC high voltage to a substrate holder 9 using a power source 13, and the energy is made incident on the surface of an electrode substrate 19. Also, on the particle group in an uncharged state, an amorphous silicon film is formed by operating the second electron generator 8 with which an electron beam is irradiated on the film surface of the substrate for the purpose of increasing the reactivity of silicon and hydrogen, nitrogen and the like. |
